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| 2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N4429 is Designed for Class C Amplifier Applications Up to 1,000 MHz. B PACKAGE STYLE .280 4L STUD A 45 FEATURES: * PG = 7.5 dB Typ. at 1.0 W/1000 MHz * Emitter Ballasting for Ruggedness * OmnigoldTM Metallization System D C J E F G H K #8-32 UNC MAXIMUM inches / mm I MAXIMUM RATINGS IC VCB PDISS TJ TSTG JC 1.0 A 45 V 7.0 W @ TC = 25 C -65 to +200 C -65 to +150 C 25 C/W O O O O DIM A B C D E F G H I J K MINIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10900 O CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Ft Cob PG C IC = 1 mA IC = 20 mA IE = 1 mA VCE = 28 V VCE = 5.0 V VCE = 20 V VCB = 28 V VCE = 28 V TC = 25 C NONE TEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 45 45 3.5 250 UNITS V V V A --MHz IC = 100 mA IC = 100 mA f = 1.0 MHz POUT = 5.0 W f = 1,000 MHz 15 600 150 5.0 6.5 40 7.5 50 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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